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IPP080N03L

INCHANGE
Part Number IPP080N03L
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP080N03L，IIPP080N03L ·FEATURES ·Static drain-source on-resist...
Datasheet PDF File IPP080N03L PDF File

IPP080N03L
IPP080N03L

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP080N03L，IIPP080N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.
0mΩ ·Enhancement mode: Vth =1.
0 to 2.
2V (VDS = 0 V, ID=250μA) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 47 Tj Max.
Operating Junction Temperature 175 Tstg Storage Tempera...


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