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Part Number
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TJ11A10M3 |
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Manufacturer
|
INCHANGE |
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Description
|
N-Channel MOSFET |
|
Published
|
Oct 4, 2020 |
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Datasheet
|
TJ11A10M3
|
Features
·Low drain-source on-resistance:
RDS(on) ≤130mΩ.(VGS = -10 V) ·Enhancement mode:
Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switc...
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