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TJ11A10M3

Toshiba
Part Number TJ11A10M3
Manufacturer Toshiba
Description MOSFETs Silicon P-Channel MOS
Published Nov 11, 2013
Detailed Description TJ11A10M3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ11A10M3 1. Applications • Switching Voltage Regulators 2. Features ...
Datasheet PDF File TJ11A10M3 PDF File

TJ11A10M3
TJ11A10M3

Overview
TJ11A10M3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ11A10M3 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) Enhancement mode: Vth = -2.
0 to -4.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating -100 ±20 -11 -22 24 37 -11 150 -55 to 150 W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2012-08-31 Rev.
1.
0 Free Datasheet http://www.
datasheet4u.
com/ TJ11A10M3 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 5.
2 62.
5 Unit /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = -25 V, Tch = 25 (initial), L = 500 µH, RG = 25 Ω, IAR = -11 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2012-08-31 Rev.
1.
0 Free Datasheet http://www.
datasheet4u.
com/ TJ11A10M3 6.
Electrical ...


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