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TJ11A10M3

INCHANGE
Part Number TJ11A10M3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor TJ11A10M3，ITJ11A10M3 ·FEATURES ·Low drain-source on-resistance:...
Datasheet PDF File TJ11A10M3 PDF File

TJ11A10M3
TJ11A10M3

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TJ11A10M3，ITJ11A10M3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤130mΩ.
(VGS = -10 V) ·Enhancement mode: Vth = -2.
0 to -4.
0V (VDS = -10 V, ID=-1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -11 IDM Drain Current-Single Pulsed -22 PD Total Dissipation @TC=25℃ 24 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ...


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