TK5R3A06PL

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5R3A06PL，ITK5R3A06PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.1mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg...