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TK5R3A06PL

Toshiba
Part Number TK5R3A06PL
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 2, 2024
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS�-H) TK5R3A06PL 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TK5R3A06PL PDF File

TK5R3A06PL
TK5R3A06PL

Overview
MOSFETs Silicon N-channel MOS (U-MOS�-H) TK5R3A06PL 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ.
) (3) Small output charge: Qoss = 32 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 4.
1 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 0.
3 mA) 3.
Packaging and Internal Circuit TK5R3A06PL TO-220SIS 1: Gate 2: Drain 3: Source ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-06 2021-01-27 Rev.
2.
0 TK5R3A06PL 4.
Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25 �) (Silicon limit) (t = 100 µs) (Tc = 25 �) (t = 1.
0 s) (Note 1) (Note 1), (Note 2) (Note 1) (Note 3) (Note 3) VDSS VGSS ID ID IDP PD EAS IAS Tch Tstg VISO(RMS) TOR 60 ±20 56 62 280 36 29 56 175 -55 to 175 2000 0.
6 V A A A W mJ A � � V N�m Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resista...


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