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TK5R3A06PL

INCHANGE
Part Number TK5R3A06PL
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5R3A06PL，ITK5R3A06PL ·FEATURES ·Low drain-source on-resistance...
Datasheet PDF File TK5R3A06PL PDF File

TK5R3A06PL
TK5R3A06PL

Overview
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5R3A06PL，ITK5R3A06PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.
1mΩ (typ.
) (VGS = 10 V) ·Enhancement mode: Vth = 1.
5 to 2.
5V (VDS = 10 V, ID=0.
3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 56 IDM Drain Current-Single Pulsed 280 PD Total Dissipation @TC=25℃ 36 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 4.
16 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5R...


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