isc P-Channel MOSFET
Transistor
2SJ389S
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤135mΩ(@VGS= -10V; ID= -5A) ·High speed switching ·Low drive current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High speed power switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-10
PD
Total Dissipation @TC=25℃
30
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Channel-to-case thermal resistance Rth(j-c)
M...