| Part Number | IPD053N06N |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% aval... |
| Features |
·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Dr... |
| File Size | 238.50KB |
| Datasheet |
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IPD053N06N : Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 IPD053N06N Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 60 V 5.3 mW 45 A 32 nC 27 nC PG-TO252-3 Type IPD053N06N Package PG-TO252-3 Marking 053N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 45 A 45 V GS=10 V, T C=25 °C, R thJA =50K/W 18 Pulsed drain.
IPD053N06N3G : www.DataSheet4U.net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD053N06N3 G Product Summary V DS R DS(on),max ID 60 5.3 90 V mΩ A Package Marking PG-TO252-3 053N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2) V GS=10 V, T C=100 °C Value 90 78 360 68 ±20 Unit A Pulsed drain current3) Avalan.