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IPD053N06N3G

Infineon Technologies
Part Number IPD053N06N3G
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Aug 30, 2011
Detailed Description www.DataSheet4U.net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching an...
Datasheet PDF File IPD053N06N3G PDF File

IPD053N06N3G
IPD053N06N3G

Overview
www.
DataSheet4U.
net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD053N06N3 G Product Summary V DS R DS(on),max ID 60 5.
3 90 V mΩ A Package Marking PG-TO252-3 053N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2) V GS=10 V, T C=100 °C Value 90 78 360 68 ±20 Unit A Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage 1) 2) 3) 4) I D,pulse E AS V GS T C=25 °C I D=90 A, R GS=25 Ω mJ V J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=1.
3 K/W the chip is able to carry 109 A.
See figure 3 for more detailed information See figure 13 for more detailed information Rev.
2.
0 page 1 2008-11-25 www.
DataSheet4U.
net IPD053N06N3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 115 -55 .
.
.
175 55/175/56 Unit W °C Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm² cooling area 5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=58 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 5) - - 1.
3 75 50 K/W 60 2 - 3 0.
1 4 1 V µA - 10 10 4.
2 1.
2 100 100 ...


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