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IPD053N06N

Infineon
Part Number IPD053N06N
Manufacturer Infineon
Description Power-Transistor
Published Dec 26, 2016
Detailed Description Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested ...
Datasheet PDF File IPD053N06N PDF File

IPD053N06N
IPD053N06N

Overview
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.
g.
sync.
rec.
• 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 IPD053N06N Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V) 60 V 5.
3 mW 45 A 32 nC 27 nC PG-TO252-3 Type IPD053N06N Package PG-TO252-3 Marking 053N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 45 A 45 V GS=10 V, T C=25 °C, R thJA =50K/W 18 Pulsed drain current2) I D,pulse T C=25 °C 180 Avalanche energy, single pulse3) E AS I D=45 A, R GS=25 W 60 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm ...


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