isc N-Channel MOSFET
Transistor
IPP65R190E6,IIPP65R190E6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not
sacrificing ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
20.
2
IDM
Drain Current-Single Pulsed
66
PD
Total Dissipation @TC=25℃
151
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ...