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IPP65R190C6 Datasheet PDF


Part Number IPP65R190C6
Manufacturer Infineon Technologies
Title Power Transistor
Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Inf...
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Li...

File Size 2.13MB
Datasheet IPP65R190C6 PDF File








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IPP65R190C6 : ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.2 IDM Drain Current-Single Pulsed 66 PD Total Dissipation @TC=25℃ 151 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.83 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP65R1.

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IPP65R190CFD : ! "#$ % " &' '( !)* ! + "#$ , ! - "#$ ! . "#$ , ! "#$ , ! ! "#$ & 3 % 43 % 4% & 4 5 ,4 4 % 56 7 89 5 5 5 :3 ! % 4' : %5 % 48 55 % % 4% & '% 4 & 5& : %4 8 %4 3 : :3 '% : 3 % 4, 4 % % % 4% : *5 3 % 4 55 : , , 4% ' / 0( 1 .2 / / !1 .2 ; / : 3 ; 3 % 4% ;3 ;3 ?& ; 78/ 8 ; :/ 5 4, @ 44 &3 4 55 9 4 " 5 =4 48 53: 4 '4' & : , A , A 4% 4, & %4 + ' ! "#$ %& ' ( *+ ,0 -1 4&11 5 8&9, 9 &9 9 :9 * 0 . 2 2 2 2 ) / 3 67 3:61 6/ 1 3 ,- : ; 9 + /&9 0@2 / 082 / 02 / 032 / 002 / = + A ;5 A; B A; A; A; 3C =+ 2 9 ? =1 1 3-- 9 ( 3 ! + "#$ , ! - "#$ ! . "#$ , ! "#$ , ! ! "#$ 1 - & D &E /& 1 ( +1 1 1 4 1 1 4 1 1 9 + 1/ 1 = + ; 1 3.

IPP65R190CFD : ·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17.5 IDM Drain Current-Single Pulsed 57.2 PD Total Dissipation @TC=25℃ 151 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.83 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOS.

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

IPP65R190E6 : CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC .

IPP65R190E6 : ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.2 IDM Drain Current-Single Pulsed 66 PD Total Dissipation @TC=25℃ 151 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.83 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP65R1.




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