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IPP65R190E6

Part Number	IPP65R190E6
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 10, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPP65R190E6，IIPP65R190E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ...
Datasheet	IPP65R190E6 PDF File

Overview

isc N-Channel MOSFET Transistor IPP65R190E6，IIPP65R190E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.
2 IDM Drain Current-Single Pulsed 66 PD Total Dissipation @TC=25℃ 151 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ...

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