IPP65R660CFD

isc N-Channel MOSFET Transistor IPP65R660CFD，IIPP65R660CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.66Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while offering an extremel...