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IPP65R660CFDA

Infineon Technologies
Part Number IPP65R660CFDA
Manufacturer Infineon Technologies
Description CFDA Power Transistor
Published May 31, 2015
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor CFDAAutomotive 650VCoolMOS™CFDAPowerTransistor IPx65R660CF...
Datasheet PDF File IPP65R660CFDA PDF File

IPP65R660CFDA
IPP65R660CFDA

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor CFDAAutomotive 650VCoolMOS™CFDAPowerTransistor IPx65R660CFDA DataSheet Rev.
2.
1 Final Automotive 650VCoolMOS™CFDAPowerTransistor IPB65R660CFDA,IPP65R660CFDA 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.
650VCoolMOS™CFDAseries combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.
Theresultingdevicesprovideallbenefitsofafast switchingSJMOSFETwhileofferinganextremelyfastandrobustbody diode.
Thiscombinationofextremelylowswitching,commutationand conductionlossestogetherwithhighestrobustnessmakeespecially resonantswitchingapplicationsmorereliable,moreefficient,lighter,and cooler.
Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Easytouse/drive •QualifiedaccordingtoAECQ101 •Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformold compound Applications 650VCoolMOS™CFDAisdesignedforswitchingapplications.
D²PAK tab 2 1 3 TO-220 tab Gate Pin 1 Drain Pin 2 Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS RDS(on),max 650 0.
66 V Ω Qg,typ 20 nC ID,pulse 17 A Eoss @ 400V 1.
8 µJ Body diode di/dt 900 A/µs Qrr 0.
2 µC trr 65 ns Irrm 4.
5 A Type/OrderingCode IPB65R660CFDA IPP65R660CFDA Package PG-TO 263 PG-TO 220 Marking 65F660A RelatedLinks - Final Data Sheet 2 Rev.
2.
1,2014-11-19 650VCoolMOS™CFDAPowerTransistor IPB65R660CFDA,IPP65R660CFDA TableofContents Description .
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2 Table of Contents .
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