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IPP65R660CFD

INCHANGE
Part Number IPP65R660CFD
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP65R660CFD，IIPP65R660CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.66Ω...
Datasheet PDF File IPP65R660CFD PDF File

IPP65R660CFD
IPP65R660CFD

Overview
isc N-Channel MOSFET Transistor IPP65R660CFD，IIPP65R660CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
66Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 17 PD Total Dissipation @TC=25℃ 62.
5 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.
0 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP65R660CFD，IIPP65R660CFD ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.
2mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=2.
1A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V VSD Diode forward voltage IF=3.
2A; VGS = 0V MIN TYP MAX UNIT 650 V 3.
5 4.
5 V 0.
66 Ω 0.
1 μA 1 μA 0.
9 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field...


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