isc N-Channel MOSFET
Transistor
IRFP4227，IIRFP4227
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤21mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
65
IDM
Drain Current-Single Pulsed
260
PD
Total Dissipation @TC=25℃
330
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-40~175
UNIT V V A A W ℃ ℃
·THE...