isc N-Channel MOSFET
Transistor
IRL3103,IIRL3103
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±16
ID
Drain Current-Continuous
64
IDM
Drain Current-Single Pulsed
220
PD
Total Dissipation @TC=25℃
94
Tj
Max.
Operat...