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IRL3102S

International Rectifier
Part Number IRL3102S
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 3, 2006
Detailed Description PD 9.1691A PRELIMINARY l l l l l IRL3102S HEXFET® Power MOSFET D Advanced Process Technology Surface Mount Optimized ...
Datasheet PDF File IRL3102S PDF File

IRL3102S
IRL3102S

Overview
PD 9.
1691A PRELIMINARY l l l l l IRL3102S HEXFET® Power MOSFET D Advanced Process Technology Surface Mount Optimized for 4.
5V-7.
0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching VDSS = 20V G S RDS(on) = 0.
013W ID = 61A Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters.
Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
D 2 P ak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.
5V… Continuous Drain Current, VGS @ 4.
5V… Pulsed Drain Current … Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
61 39 240 89 0.
71 ± 10 220 35 8.
9 5.
0 -55 to + 150 300 (1.
6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RqJC RqJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ.
––– ––– Max.
1.
4 40 Units °C/W 9/16/97 IRL3102S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp.
Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to...


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