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IRL3102

International Rectifier
Part Number IRL3102
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 3, 2006
Detailed Description PD- 9.1694A PRELIMINARY l l l l IRL3102 HEXFET® Power MOSFET D Advanced Process Technology Optimized for 4.5V-7.0V Ga...
Datasheet PDF File IRL3102 PDF File

IRL3102
IRL3102

Overview
PD- 9.
1694A PRELIMINARY l l l l IRL3102 HEXFET® Power MOSFET D Advanced Process Technology Optimized for 4.
5V-7.
0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching G VDSS = 20V RDS(on) = 0.
013Ω S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment.
Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry.
TO-220AB ID = 61A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100µs) Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max.
61 39 240 89 0.
71 ± 10 14 220 35 8.
9 5.
0 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
––– 0.
50 ––– Max.
1.
4 ––– 62 Units °C/W 11/18/97 IRL3102 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward T...


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