BU941ZL

BU941Z : ® BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES TO-3 APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS 1 2 3 2 3 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM for TO-3 Emitter: pin 2 Base: pin1 Collector: tab ABSOLUTE MAXIMUM RATINGS Symbol V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BU941Z Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc = 25 C Storage T emperature Max. O perating Junction Tempe.

BU941Z : UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER 1 TO-3P  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM (2) C 1 1 TO-220 TO-263 B(1) (3) E  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package BU941ZL-T3P-T BU941ZG-T3P-T TO-3P BU941ZL-TA3-T BU941ZG-TA3-T TO-220 BU941ZL-TQ2-T BU941ZG-TQ2-T TO-263 BU941ZL-TQ2-R BU941ZG-TQ2-R TO-263 Note: Pin assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE BCE BCE BCE Packing Tube Tube Tube Tape Reel BU941ZG-T3P-T (1)Pac.

BU941ZE3 : CYStech Electronics Corp. Spec. No. : C660E3 Issued Date : 2010.02.03 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BU941ZE3 BVCEO IC RCESAT(MAX) 350V 15A 0.18Ω Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent Circuit BU941ZE3 B C Outline TO-220 B：Base C：Collector E：Emitter E BCE BU941ZE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C660E3 Issued Date : 2010.02.03 Revised Date : Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Col.

BU941ZF3 : CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZF3 Spec. No. : C660F3 Issued Date : 2010.10.01 Revised Date : 2015.09.04 Page No. : 1/6 Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent Circuit BU941ZF3 B C B：Base C：Collector E：Emitter E Outline TO-263 BCE Ordering Information Device BU941ZF3-0-T7-X Package Shipping TO-263 (Pb-free lead plating package) 800pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7: 800 pcs / tape & reel, 13” reel Pr.

BU941ZFP : CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZFP Spec. No. : C660FP Issued Date : 2008.05.20 Revised Date : Page No. : 1/5 Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free package Applications •High ruggedness electronic ignitions Equivalent Circuit BU941ZFP B C Outline TO-220FP B：Base C：Collector E：Emitter E BCE BU941ZFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C660FP Issued Date : 2008.05.20 Revised Date : Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Therm.

BU941ZLE3 : CYStech Electronics Corp. Spec. No. : C660E3 Issued Date : 2014.01.09 Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BU941ZLE3 BVCEO IC VCESAT(MAX) 350V 15A 1.6V Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent Circuit BU941ZLE3 B C Outline TO-220 B：Base C：Collector E：Emitter E BCE Ordering Information Device BU941ZLE3-0-UB-S Package TO-220 (Pb-free lead plating) Shipping 50 pcs / tube, 20 tubes/ box , 4 boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing s.

BU941ZNF3 : CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZNF3 Spec. No. : C660F3 Issued Date : 2010.10.01 Revised Date : 2015.09.04 Page No. : 1/6 Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent Circuit BU941ZNF3 B C B：Base C：Collector E：Emitter E Outline TO-263 BCE Ordering Information Device BU941ZNF3-0-T7-X Package Shipping TO-263 (Pb-free lead plating package) 800pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7: 800 pcs / tape & reel, 13” reel .

BU941ZP : The devices are bipolar Darlington transistors manufactured using Multi-Epitaxial Planar technology. They have been properly designed to be used in Automotive environment as electronic ignition power actuators. 3 2 1 TO-247 TO-3PF Figure 1. Internal schematic diagram Table 1. Device summary Order code BU941ZP BU941ZPFI Marking BU941ZP BU941ZPFI Packages TO-247 TO-3PF Packaging Tube Tube January 2008 Rev 7 1/11 www.st.com 11 Absolute maximum ratings 1 Absolute maximum ratings BU941ZP BU941ZPFI Table 2. Absolute maximum ratings Symbol Parameter VCEO VEBO IC ICM IB IBM Ptot Visol Tstg TJ Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0.

BU941ZP : ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS(TBaB=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VB EBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak PC Collector Power Dissipation @ TB CB =25℃ T JB B Junction Temperature 5 A 155 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER .

BU941ZP3 : CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZP3 BVCEO IC VCESAT(MAX) Spec. No. : C660P3 Issued Date : 2008.07.22 Revised Date :2011.01.04 Page No. : 1/5 350V 15A 2V @12A Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent Circuit BU941ZP3 B C Outline TO-247 B：Base C：Collector E：Emitter E BCE BU941ZP3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C660P3 Issued Date : 2008.07.22 Revised Date :2011.01.04 Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emi.

BU941ZPFI : The devices are bipolar Darlington transistors manufactured using Multi-Epitaxial Planar technology. They have been properly designed to be used in Automotive environment as electronic ignition power actuators. 3 2 1 TO-247 TO-3PF Figure 1. Internal schematic diagram Table 1. Device summary Order code BU941ZP BU941ZPFI Marking BU941ZP BU941ZPFI Packages TO-247 TO-3PF Packaging Tube Tube January 2008 Rev 7 1/11 www.st.com 11 Absolute maximum ratings 1 Absolute maximum ratings BU941ZP BU941ZPFI Table 2. Absolute maximum ratings Symbol Parameter VCEO VEBO IC ICM IB IBM Ptot Visol Tstg TJ Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0.

BU941ZPFI : ·With TO-3PML package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·High ruggedness electronic ignitions PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open base Open collector VALUE 350 5 15 30 1 5 65 175 -65~175 UNIT V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction c.

BU941ZPFI : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 65 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARA.

BU941ZR3 : CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZR3 BVCEO IC VCESAT(MAX) Spec. No. : C660R3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/5 350V 15A 2V @12A Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent Circuit BU941ZR3 B C Outline TO-3P B：Base C：Collector E：Emitter E BCE BU941ZR3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C660R3 Issued Date : 2016.11.02 Revised Date : Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Coll.

BU941ZT : ® BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s s VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) TO-220 3 1 2 1 2 3 TO-220FP APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS 1 3 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current BU941Z T Total Dissipation at Tc = .

BU941ZT : ·High Voltage ·DARLINGTON ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth j-c Thermal.