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BU941ZPFI

INCHANGE
Part Number BU941ZPFI
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 8, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ...
Datasheet PDF File BU941ZPFI PDF File

BU941ZPFI
BU941ZPFI

Overview
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.
) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 65 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
3 ℃/W BU941ZPFI isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTER...


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