Part Number
|
IXTA08N100P |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Nov 4, 2020 |
Detailed Description
|
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY08N100P IXTA08N100P IXTP08N100P
Symbol
VDSS VDGR V...
|
Datasheet
|
IXTA08N100P
|
Overview
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY08N100P IXTA08N100P IXTP08N100P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
1000
V
1000
V
20
V
30
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
0.
8 1.
5 0.
8 80 10 42 -55 .
.
.
+150 150 -55 .
.
.
+150
A A
A mJ V/ns
W C C C
Maximum Lead Temperature for Soldering
300
°C
1.
6 mm (0.
062in.
) from Case for 10s
260
°C
Mounting Force (TO-263) Mounting Torque (TO-220)
10.
.
65 / 2.
2.
.
14.
6 1.
13 / 10
N/lb Nm/...
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