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IXTA08N100P

IXYS
Part Number IXTA08N100P
Manufacturer IXYS
Description Power MOSFET
Published Nov 4, 2020
Detailed Description PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR V...
Datasheet PDF File IXTA08N100P PDF File

IXTA08N100P
IXTA08N100P

Overview
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 0.
8 1.
5 0.
8 80 10 42 -55 .
.
.
+150 150 -55 .
.
.
+150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10.
.
65 / 2.
2.
.
14.
6 1.
13 / 10 N/lb Nm/lb.
in TO-252 TO-263 TO-220 0.
35 g 2.
50 g 3.
00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 50μA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Chara...


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