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IXTA08N100P

INCHANGE
Part Number IXTA08N100P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 4, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20Ω@VGS=10V ·Fully characterize...
Datasheet PDF File IXTA08N100P PDF File

IXTA08N100P
IXTA08N100P

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 0.
8 IDM Drain Current-Single Pulsed 1.
5 PD Total Dissipation @TC=25℃ 42 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 2.
98 UNIT ℃/W IXTA08N100P isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTA08N100P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specif...


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