isc N-Channel MOSFET
Transistor
AOT416
·FEATURES ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 37mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current-Continuous
42
A
IDM
Drain Current-Single Pulsed
110
A
PD
Total Dissipation @TC=25℃
150
W
Tj
Max.
Operating Junction Temperature -55~175 ℃
Tstg
...