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AOT402

Alpha & Omega Semiconductors
Part Number AOT402
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Sep 20, 2006
Detailed Description www.DataSheet4U.com AOT402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT402 uses advan...
Datasheet PDF File AOT402 PDF File

AOT402
AOT402

Overview
www.
DataSheet4U.
com AOT402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
Standard Product AOT402 is Pb-free (meets ROHS & Sony 259 specifications).
AOT402L is a Green Product ordering option.
AOT402 and AOT402L are electrically identical.
TO-220 D Features VDS (V) = 105V ID = 110 A (VGS = 10V) RDS(ON) < 8.
6 mΩ (VGS = 10V) @ ID = 30A RDS(ON) < 10 mΩ (VGS = 6V) Top View Drain Connected to Tab DataShee G S DataSheet4U.
com G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 105 ±25 110 85 200 100 540 300 150 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.
3mH Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RθJA RθJC Typ 47 0.
25 Max 60 0.
5 Units °C/W °C/W DataSheet4U.
com Alpha & Omega Semiconductor, Ltd.
DataSheet 4 U .
com www.
DataSheet4U.
com AOT402 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=84V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=6V, ID=30A Forward Transconductance VDS=5V, ID=30A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 2 200 6.
9 12.
8 7.
9 88 0.
7 1 110 7.
7 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 820 300 1.
25 182 2 230 10 8.
6 15 10 3.
3 Min 105 1 5 100 4 Typ Max Units V µA nA V A mΩ mΩ S V A nF pF pF Ω nC nC nC ns ns ns ns 115 ns nC STATIC PARAMETERS BVDSS Dra...


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