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AOT404

Alpha & Omega Semiconductors
Part Number AOT404
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Sep 20, 2006
Detailed Description www.DataSheet4U.com AOT404 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT404 uses advan...
Datasheet PDF File AOT404 PDF File

AOT404
AOT404

Overview
www.
DataSheet4U.
com AOT404 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications.
Standard Product AOT404 is Pb-free (meets ROHS & Sony 259 specifications).
AOT404L is a Green Product ordering option.
AOT404 and AOT404L are electrically identical.
TO-220 D Top View Drain Connected to Tab G S Features VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 mΩ (VGS =10V) @ 20A RDS(ON) < 31 mΩ (VGS = 6V) DataShee DataSheet4U.
com G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 105 ±25 40 28 100 20 200 100 50 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.
1mH Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RθJA RθJC Typ 50 1 Max 60 1.
5 Units °C/W °C/W DataSheet4U.
com Alpha Omega Semiconductor, Ltd.
DataSheet 4 U .
com www.
DataSheet4U.
com AOT404 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=84V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C 2.
5 100 21.
5 44 24 50 0.
73 1 55 2038 VGS=0V, VDS=...


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