NGTG50N60FWG
IGBT
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
• Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation • 5 ms Short−Circuit Capability • These are Pb−Free Devices
Typical Applications
• Solar Inverters • Uninterruptible Power Supples (UPS) • Motor Drives
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
VCES
600
V
IC
A
100
50
Pulsed collector current, Tpulse limited...