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G50N60F

ON Semiconductor
Part Number G50N60F
Manufacturer ON Semiconductor
Description IGBT
Published Jan 8, 2021
Detailed Description NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench constructio...
Datasheet PDF File G50N60F PDF File

G50N60F
G50N60F

Overview
NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features • Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inverters • Uninterruptible Power Supples (UPS) • Motor Drives ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 100 50 Pulsed collector current, Tpulse limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C Gate−emitter voltage Transient Gate−Emitter Voltage ICM 200 A tSC 5 ms VGE $20 V $30 Power Dissipation @ TC = 25°C @ TC = 100°C PD W 223 89 Operating junction temperature range TJ −55 to +150 °C Storage te...


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