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G50N60HS

Infineon
Part Number G50N60HS
Manufacturer Infineon
Description High Speed IGBT
Published Mar 16, 2009
Detailed Description SGW50N60HS www.DataSheet4U.com High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • ...
Datasheet PDF File G50N60HS PDF File

G50N60HS
G50N60HS

Overview
SGW50N60HS www.
DataSheet4U.
com High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ VCE 600V IC 50A Eoff25 Tj Marking Package PG-TO-247-3-21 G E PG-TO-247-3-21 Type SGW50N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C 0.
88mJ 150°C G50N60HS Symbol VCE IC Value 600 100 50 Unit V A Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 50A, VCC=50V, RGE=25Ω start TJ=25°C Gat...


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