HM8810B

Dual N-Channel Enhancement Mode Power MOSFET Description The HM8810% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =7A RDS(ON) 27mΩ @ VGS=2.5V RDS(ON)...