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HM8810B

H&M semi
Part Number HM8810B
Manufacturer H&M semi
Description Dual N-Channel MOSFET
Published Jan 10, 2021
Detailed Description Dual N-Channel Enhancement Mode Power MOSFET Description The HM8810% uses advanced trench technology to provide excellen...
Datasheet PDF File HM8810B PDF File

HM8810B
HM8810B

Overview
Dual N-Channel Enhancement Mode Power MOSFET Description The HM8810% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.
5V RDS(ON) < 21mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package  Marking and pin Assignment Application ●PWM application ●Load switch T6623 HM8810% Marking and pin Assignment SOT23-6L top view Package Marking And Ordering Information Device M...


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