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HM8810E

H&M semi
Part Number HM8810E
Manufacturer H&M semi
Description Dual N-Channel Enhancement Mode Power MOSFET
Published Apr 12, 2021
Detailed Description HM8810E Dual N-Channel Enhancement Mode Power MOSFET Description The HM8810E uses advanced trench technology to provide...
Datasheet PDF File HM8810E PDF File

HM8810E
HM8810E

Overview
HM8810E Dual N-Channel Enhancement Mode Power MOSFET Description The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.
5V RDS(ON) < 21mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Marking and pin Assignment Application ●PWM application ●Load switch T6623 SOT23-6L top view Package Marking And Ordering In...


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