R6511KNX 　　Nch 650V 11A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.
) 0.
40Ω ID ±11A TO-220FM PD 53W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS complian lInner circuit lApplication Switching applications lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 650 V ±11 A ±33 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V A...

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