R6511KNX
Nch 650V 11A Power MOSFET
Datasheet
lOutline
VDSS
650V
RDS(on)(Max. )
0. 40Ω
ID
±11A
TO-220FM
PD
53W
lFeatures
1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS complian
lInner circuit
lApplication Switching applications
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
650
V
±11
A
±33
A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C)
IAS EAS*3 PD
1. 8
A
223
mJ
53
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
...