DatasheetsPDF.com

R6511KNX

Part Number	R6511KNX
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Mar 1, 2021
Detailed Description	isc N-Channel MOSFET Transistor R6511KNX FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(M...
Datasheet	R6511KNX PDF File

Overview

isc N-Channel MOSFET Transistor R6511KNX FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 400mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 53 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tst...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)