Part Number
|
HM8810E |
Manufacturer
|
H&M semi |
Description
|
Dual N-Channel Enhancement Mode Power MOSFET |
Published
|
Apr 12, 2021 |
Detailed Description
|
HM8810E
Dual N-Channel Enhancement Mode Power MOSFET
Description
The HM8810E uses advanced trench technology to provide...
|
Datasheet
|
HM8810E
|
Overview
HM8810E
Dual N-Channel Enhancement Mode Power MOSFET
Description
The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features
● VDS = 20V,ID =7A RDS(ON) 27mΩ @ VGS=2.
5V RDS(ON) 21mΩ @ VGS=4.
5V ESD Rating: 2000V HBM
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Schematic diagram
8810
Marking and pin Assignment
Marking and pin Assignment
Application
●PWM application ●Load switch
T6623
SOT23-6L top view
Package Marking And Ordering In...
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