isc Silicon
NPN Power
Transistor
3DD5E
DESCRIPTION ·Excellent safe operating area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=75℃
TJ
Junction Temperature
3
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal R...