isc Silicon
NPN Darlington Power
Transistor
TTD1415B
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.
5V(Max)@ IC= 3A ·Complement to Type TTB1020B ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Tem...