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TTD1415B

Toshiba
Part Number TTD1415B
Manufacturer Toshiba
Description Silicon NPN Transistor
Published May 8, 2021
Detailed Description Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1. Applications • High-Power Switching • Hammer...
Datasheet PDF File TTD1415B PDF File

TTD1415B
TTD1415B

Overview
Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1.
Applications • High-Power Switching • Hammer Drivers 2.
Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.
5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3.
Packaging and Internal Circuit TO-220SIS 1.
Base 2.
Collector 3.
Emitter ©2015 Toshiba Corporation 1 Start of commercial production 2012-09 2015-08-06 Rev.
3.
0 TTD1415B 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Mounting torque (Tc = 25 ) (Note 1) (Note 1) VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg TOR 120 100 6 7 10 0.
7 2 25 150 -55 to 150 0.
6 V A W  Nm ...


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