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TTD1415B

Inchange
Part Number TTD1415B
Manufacturer Inchange
Description Silicon NPN Power Transistor
Published May 8, 2021
Detailed Description isc Silicon NPN Darlington Power Transistor TTD1415B DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Low...
Datasheet PDF File TTD1415B PDF File

TTD1415B
TTD1415B

Overview
isc Silicon NPN Darlington Power Transistor TTD1415B DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.
5V(Max)@ IC= 3A ·Complement to Type TTB1020B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.
0 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ...


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