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Part Number
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TTD1415B |
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Manufacturer
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Toshiba |
|
Description
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Silicon NPN Transistor |
|
Published
|
May 8, 2021 |
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Datasheet
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TTD1415B
|
Features
(1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B
3. Packaging and Internal Circuit
TO-220SIS
1. Base 2. Collec...
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