Part Number
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SCT20N120AG |
Manufacturer
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STMicroelectronics |
Description
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Automotive-grade silicon carbide Power MOSFET |
Published
|
Mar 1, 2023 |
Detailed Description
|
SCT20N120AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247...
|
Datasheet
|
SCT20N120AG
|
Overview
SCT20N120AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ.
, TJ=150 °C), in an HiP247 package
Features
HiP247
3 2 1
D(2, TAB)
• AEC-Q101 qualified • Very tight variation of on-resistance vs.
temperature • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance
Applications
• Motor drives • EV chargers • High voltage DC-DC converters • Switch mode power supplies
G(1) S(3)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good sw...
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