| Part Number | 2SK2978 |
| Manufacturer | Renesas |
| Title | Silicon N-Channel MOSFET |
| Description | 2SK2978 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A) • Low driv... |
| Features |
• Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive devices. REJ03G1060-0500 (Previous: ADE-208-659C) Rev.5.00 Sep.07,2005 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 21 3 4 D 1. Gate 2. Drain ... |
| File Size | 77.56KB |
| Datasheet |
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2SK2972 : .
2SK2973 : 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX 1.6±0.2 Dimensions in mm 1.5±0.1 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm • High efficiency:55% typ. • Source case type SOT-89 package (connected internally to source) 1 2 3 APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1.5 0.53 MAX 0.48MAX 1 : DRAIN 2 : SOURCE 3 : GATE 0.4 +0.03 -0.05 3.0 MARKING SOT-89 MARKING TYPE No. K1 LOT No. ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted) Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage C.
2SK2974 : 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm • High efficiency:55% typ. • Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1 : DRAIN 2 : SOURCE 3 : GATE MARKING INDEX MARK TYPE No. LOT No. ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted) Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage Channel dissipation Junc.
2SK2975 : 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm • High efficiency:55% typ. • Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1 : DRAIN 2 : SOURCE 3 : GATE MARKING INDEX MARK TYPE No. LOT No. ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted) Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage Channel dissipation Junc.
2SK2976 : Ordering number:ENN6003 N-Channel Silicon MOSFET 2SK2976 DC-DC Converter Applications Features · Low ON resistance. · 4V drive. Package Dimensions unit:mm 2083B [2SK2976] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 0.8 1.6 1.2 7.5 0.5 1 2 3 0.6 5.5 7.0 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2092B [2SK2976] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.5 0.8 2 3 2.5 1.2 0 to 0.2 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, .
2SK2977LS : Ordering number:ENN6423 N-Channel Silicon MOSFET 2SK2977LS DC/DC Converter Applications Features · Low ON resistance. · 4V drive. Package Dimensions unit:mm 2078B [2SK2977LS] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C 2.55 2.55 Conditions 2.4 0.6 1.2 1 : Gate 2 : Drain 3 : Source SANYO : TO220FI-LS Ratings 30 ±20 30 120 2.0 30 150 –55 to +150 Unit V V A A W W ˚C ˚C .
2SK2978 : 2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.09 Ω typ. (V GS = 4 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2978 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 20 ±10 2.5 5 2.5 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 1 150 –55 to +150 1. PW ≤ 10µs, d.