Part Number
|
BAR80 |
Manufacturer
|
Infineon Technologies AG |
Description
|
Silicon RF Switching Diode |
Published
|
Mar 26, 2005 |
Detailed Description
|
BAR80
Silicon RF Switching Diode
Design for use in shunt configuration High shunt signal isolation Low shunt inser...
|
Datasheet
|
BAR80
|
Overview
BAR80
Silicon RF Switching Diode
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
3 4 2 1
VSO05553
Type BAR80
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature
Marking AAs 1=C
Pin Configuration 2=A 3=C 4=A
Package MW-4
Symbol VR IF Tj Top Tstg
Value 35 100 150 -55 .
.
.
125 -55 .
.
.
150
Unit V mA °C
Operating temperature range Storage temperature
1
Aug-17-2001
BAR80
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, ...
Similar Datasheet