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Part Number
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BAR81 |
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Manufacturer
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Infineon Technologies AG |
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Description
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Silicon RF Switching Diodes |
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Published
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Mar 26, 2005 |
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Detailed Description
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BAR81
Silicon RF Switching Diodes
Design for use in shunt configuration High shunt signal isolation Low shunt inse...
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|
Datasheet
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BAR81
|
Overview
BAR81
Silicon RF Switching Diodes
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
3 4 2 1
VSO05553
Type BAR81
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature
Marking BBs 1=C
Pin Configuration 2=A 3=C 4=A
Package MW-4
Symbol VR IF Tj Top Tstg
Value 30 100 150 -55 .
.
.
125 -55 .
.
.
150
Unit V mA °C
Operating temperature range Storage temperature
1
Aug-21-2001
BAR81
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA VF 0.
93 1 IR 20 typ.
max.
Unit
nA V
AC characteristics Diode ca...
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