Transistor
2SD966
Silicon
NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.
9± 0.
2
Unit: mm
4.
9± 0.
2
q q
2.
54± 0.
15
(Ta=25˚C)
Ratings 40 20 7 8 5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
0.
45–0.
1 1.
27
+0.
2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.
5± 0.
5
s Absolute Maximum Ratings
0.
7–0.
2
+0.
3
Low collector to emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency with the low-voltage power supply.
0.
7± 0.
1
8.
6± 0.
...