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2SJ278

P-Channel MOSFET

Description

2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ278 Absolute Maximum Ratings (Ta = 25...

Hitachi Semiconductor

View 2SJ278 Datasheet

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